Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations

Abstract Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling based on analytical solution two-dimensional Poisson’s equation obtained by using homotopy perturbation method (HPM). HPM with suitable boundary conditions results so-called general and closed-form, independent surface potential. has been applied output characteristics FDSOI MOSFET, which show good agreement compared numerical results.